PART |
Description |
Maker |
UPA1476 UPA1476H |
2 A, 115 V, 4 CHANNEL, NPN, Si, POWER TRANSISTOR NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
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NEC Corp. NEC[NEC]
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2N2230 2N3472 2N2227 2N2229 |
10 A, 50 V, NPN, Si, POWER TRANSISTOR 10 A, 150 V, NPN, Si, POWER TRANSISTOR, TO-63 10 A, 100 V, NPN, Si, POWER TRANSISTOR 10 A, 200 V, NPN, Si, POWER TRANSISTOR
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2N6676 JANTX2N6693 JAN2N6676 JAN2N6678 JAN2N6691 J |
NPN Transistor From old datasheet system NPN POWER SILICON TRANSISTOR 15 A, 300 V, NPN, Si, POWER TRANSISTOR, TO-61
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MICROSEMI[Microsemi Corporation] http:// Microsemi, Corp.
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2SD1692 2SD1692L 2SD1692K |
NPN SILICON DARLINGTON TRANSISTOR From old datasheet system NPN SILICON POWER TRANSISTOR Low-Power, Single/Dual-Level Battery Monitors with Hysteresis TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 3A I(C) | TO-126 晶体管|晶体管|达林顿|叩| 100V的五(巴西)总裁| 3A条一(c)|26
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NEC Corp. NEC, Corp.
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MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS COMPLEMETARY SILICON POWER TRANSISTORS SILICON NPN TRANSISTOR HIGH VOLTAGE PNP POWER TRANSISTOR SILICON NPN POWER DARLINGTON TRANSISTOR RF Power Field Effect Transistors 880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs RF LDMOS Wideband Integrated Power Amplifiers GENERAL PURPOSE L TO X-BAND GaAs MESFET 10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
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FREESCALE NEC STMICROELECTRONICS[STMicroelectronics]
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154-22 153-28 154-18 154-04 154-10 154-14 154-12 1 |
TRANSISTOR | BJT | NPN | 220V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 180V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 140V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 160V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 260V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 200V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 80V V(BR)CEO | 7.5A I(C) | STR-1/4 TRANSISTOR | BJT | NPN | 240V V(BR)CEO | 7.5A I(C) TRANSISTOR | BJT | NPN | 40V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 40V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 7.5A I(C) | STR-1/4 晶体管|晶体管|叩| 60V的五(巴西)总裁| 7.5AI(丙)|个STR - 1 / 4 TRANSISTOR | BJT | NPN | 280V V(BR)CEO | 7.5A I(C) 晶体管|晶体管| npn型| 280伏特五(巴西)总裁| 7.5AI(丙
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NXP Semiconductors N.V. Bel Fuse, Inc. YEONHO Electronics Co., Ltd.
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ASI10735 VLB40-12F ALR100 ASI10514 ASI10566 ASI105 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator VHF BAND, Si, NPN, RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR
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Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
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ASI10717 VHB40-12S ASI10642 TVU05B |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator VHF BAND, Si, NPN, RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR
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Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
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ASI10602 HF15-28F ASI10639 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator VHF BAND, Si, NPN, RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR
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Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
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B25-28 B2528 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator VHF BAND, Si, NPN, RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR From old datasheet system
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Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
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ASI10562 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator L BAND, Si, NPN, RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc.
|
ASI10565 AVD250 |
14 pin DIP, 5.0 Volt, HCMOS/TTL, Clock Oscillator L BAND, Si, NPN, RF POWER TRANSISTOR NPN SILICON RF POWER TRANSISTOR
|
Advanced Semiconductor, Inc. ASI[Advanced Semiconductor]
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